Hydrogen Peroxide |
H2O2 |
Used as cleansing solution mixed with ammonium hydroxide and ultrapure water to remove surface contaminants as well as to cleanse organic matters mixed with sulfuric acid.
|
Grade |
EL |
Sulfuric acid |
H2SO2 |
Used as cleansing solution mixed with hydrogen peroxide to cleanse organic matters.
|
Grade |
EL |
Ammonia water |
NH2OH |
Used as cleansing solution mixed with hydrogen peroxide and ultrapure water to remove surface contaminants.
|
Grade |
EL |
IPA |
(CH3)2CHOH |
Used to cleanse organic matters or remove water/moisture of the surface. Also used as buffer solution preventing anti-corrosion for wiring.
|
Grade |
ELH |
Nitric acid |
HNO3 |
Used to cleanse the equipment. Also used as etching solution mixed with other kinds of acid.
|
Grade |
EL |
Hydrochloric acid |
HCl |
Used as part of cleansing solution to remove metallic ion after RCA-processing.
|
Grade |
EL |
Acetic acid |
CH3COOH |
Used as buffer solution to cleanse the surface or to enhance uniformity of the cleansing process mixed with other kinds of acid.
|
Grade |
EL |
Phosphoric acid |
H3PO2 |
Used as etching solution for silicon nitride or as part of other etching solution.
|
Grade |
EL |
Hydrofluoric acid |
HF |
Used as etching solution for silicon oxide.
|
Grade |
EL |
Acetone |
CH3COCH3 |
Used to remove organic matters of the surface or cleanse the equipment.
|
Grade |
ELH |
Methanol |
CH3OH |
Used to remove organic matters of the surface or cleanse the equipment.
|
Grade |
EL |
Ethanol |
C2H2OH |
Used to cleanse the equipment.
|
Grade |
EL |
Etching solution |
|
Etching solution suitable for every process. Ingredients depend on user/process.
|